TPC8122(TE12L,Q)

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TPC8122(TE12L,Q) - Toshiba
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Краткое описание: P-CH MOSFET, 30V, 12A, 8-Pin SOP, Si
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 12A continuous drain current. This single-element silicon transistor utilizes U-MOS V process technology and is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads for surface mounting. Key specifications include a maximum drain-source on-resistance of 8 mΩ at 10V, typical gate charge of 62 nC at 10V, and typical input capacitance of 2450 pF at 10V. The plastic package measures 5.5mm x 4.4mm x 1.5mm, supporting a maximum power dissipation of 1900 mW across an operating temperature range of -55°C to 150°C.
PCB 8
ECCN EAR99
PPAP No
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 8
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case SOP
AEC Qualified No
Configuration Single Quad Drain Triple Source
RoHS Versions 2011/65/EU
Pin Pitch (mm) 1.27
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 4.4
Process Technology U-MOS V
Package Description Plastic Small Outline Package
Package Family Name SOP
Package Height (mm) 1.5
Package Length (mm) 5.5(Max)
Seated Plane Height (mm) 1.6
Max Operating Temperature 150°C
Maximum Power Dissipation 1900mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 62nC
Typical Gate Charge @ Vgs 62@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Gate Threshold Voltage 2V
Maximum Drain Source Resistance 8@10VmOhm
Typical Input Capacitance @ Vds 2450@10VpF
Maximum Continuous Drain Current 12A

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