TPC8124

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TPC8124 - Toshiba
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Краткое описание: P-CH MOSFET 40V 12A 8-Pin SOP Surface Mount
Производитель Toshiba
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NRND)

Дополнительная информация

P-channel enhancement mode power MOSFET featuring U-MOS VI process technology. This surface-mount transistor offers a maximum drain-source voltage of 40V and a continuous drain current of 12A. Housed in an 8-pin SOP package with gull-wing leads, it boasts a low drain-source on-resistance of 8mΩ at 10V. The component is constructed from silicon and operates within a temperature range of -55°C to 150°C.
PCB 8
ECCN EAR99
PPAP No
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 8
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case SOP
AEC Qualified No
Configuration Single Quad Drain Triple Source
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 1.27
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 4.4
Process Technology U-MOS VI
Package Description Plastic Small Outline Package
Package Family Name SOP
Package Height (mm) 1.5
Package Length (mm) 5.5(Max)
Radiation Hardening No
Seated Plane Height (mm) 1.6
Max Operating Temperature 150°C
Maximum Power Dissipation 1900mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 104nC
Typical Gate Charge @ Vgs 104@10VnC
Maximum Gate Source Voltage 20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 40V
Maximum Gate Threshold Voltage 2V
Maximum Drain Source Resistance 8@10VmOhm
Typical Input Capacitance @ Vds 4750@10VpF
Maximum Continuous Drain Current 12A

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