TPC8128

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TPC8128 - Toshiba
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Краткое описание: P-CH MOSFET 30V 16A SOP 8-Pin Surface Mount
Производитель Toshiba
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NRND)

Дополнительная информация

P-channel Power MOSFET featuring 30V drain-source voltage and 16A continuous drain current. This single element device utilizes U-MOS VI process technology and is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads for surface mounting. Key specifications include a maximum drain-source on-resistance of 5 mOhm at 10V, typical gate charge of 115 nC at 10V, and typical input capacitance of 4800 pF at 10V. Operating temperature range is -55°C to 150°C.
PCB 8
ECCN EAR99
PPAP No
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 8
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case SOP
AEC Qualified No
Configuration Single Quad Drain Triple Source
RoHS Versions 2011/65/EU
Pin Pitch (mm) 1.27
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 4.4
Process Technology U-MOS VI
Package Description Plastic Small Outline Package
Package Family Name SOP
Package Height (mm) 1.5
Package Length (mm) 5.5(Max)
Radiation Hardening No
Seated Plane Height (mm) 1.6
Max Operating Temperature 150°C
Maximum Power Dissipation 1900mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 115nC
Typical Gate Charge @ Vgs 115@10VnC
Maximum Gate Source Voltage 30V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Gate Threshold Voltage 2V
Maximum Drain Source Resistance 5@10VmOhm
Typical Input Capacitance @ Vds 4800@10VpF
Maximum Continuous Drain Current 16A

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