TPC8305(TE12L,Q,M)
Снят с производства
Увеличить
Краткое описание:
P-CH MOSFET, 20V, 5A, Dual Drain, 8-Pin SOP, Si
Дополнительная информация
P-channel enhancement mode power MOSFET, featuring a dual dual drain configuration with two silicon elements per chip. This surface-mount component offers a maximum drain-source voltage of 20V and a continuous drain current of 5A. Housed in an 8-pin SOP package with gull-wing leads, it has a maximum package length of 5.5mm and a pin pitch of 1.27mm. Key electrical characteristics include a maximum drain-source resistance of 30mΩ at 4.5V and a typical gate charge of 24nC at 5V.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | SOP |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 4.4 |
| Package Description | Plastic Small Outline Package |
| Package Family Name | SOP |
| Package Height (mm) | 1.5 |
| Package Length (mm) | 5.5(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.6 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 24@5VnC |
| Maximum Gate Source Voltage | ±12V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 2030@10VpF |
| Maximum Continuous Drain Current | 5A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
