TPCA8006-H(TE12LQM

Не рекомендуется для новых проектов
TPCA8006-H(TE12LQM - Toshiba
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Краткое описание: N-Channel MOSFET, 100V, 18A, 67mR, SOP, Surface Mount
Производитель Toshiba
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED FOR NEW DESIGN)

Дополнительная информация

N-channel MOSFET transistor featuring 100V drain-to-source breakdown voltage and 18A continuous drain current. Offers a low 67mΩ drain-to-source resistance at 5V gate-source voltage, with a maximum power dissipation of 45W. This surface-mount device operates within a temperature range of -55°C to 150°C and has a fast 2ns fall time. Packaged in SOP for tape and reel distribution.
RoHS Not CompliantNo
Mount Surface Mount
Width 5mm
Height 0.95mm
Length 5mm
Polarity N-CHANNEL
Fall Time 2ns
Packaging Tape and Reel
Rds On Max 67mR
Nominal Vgs 5V
Package/Case SOP
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 780pF
Power Dissipation 45W
Threshold Voltage 5V
Radiation Hardening No
Reach SVHC Compliant No
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 67mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 18A
Drain to Source Voltage (Vdss) 100V
Drain to Source Breakdown Voltage 100V

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