TPCA8040-H(TE12LQM)

Не рекомендуется для новых проектов
TPCA8040-H(TE12LQM) - Toshiba
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Краткое описание: N-CH MOSFET 30V 23A SOP Advance, Single Quad Drain
Производитель Toshiba
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (LTB)

Дополнительная информация

N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 23A continuous drain current. This surface-mount device utilizes a heat-sinked small-outline no-lead package (SOP Advance) with 8 pins, measuring 5x5x0.95mm. Key specifications include a maximum drain-source on-resistance of 9.4mΩ at 10V and a typical gate charge of 23nC at 10V. The component operates across a temperature range of -55°C to 150°C.
PCB 8
ECCN EAR99
PPAP No
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 8
Automotive No
Lead Shape No Lead
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case SOP Advance
AEC Qualified No
Configuration Single Quad Drain Triple Source
RoHS Versions 2011/65/EU
Pin Pitch (mm) 1.27
Package Material Plastic
Basic Package Type Non-Lead-Frame SMT
Package Weight (g) 0.069
Package Width (mm) 5
Process Technology U-MOS VI-H
Package Description Heat Sinked Small-Outline No Lead
Package Family Name SOP
Package Height (mm) 0.95
Package Length (mm) 5
Seated Plane Height (mm) 0.95
Max Operating Temperature 150°C
Maximum Power Dissipation 2800mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 23nC
Typical Gate Charge @ Vgs 23@10V|12@5VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Gate Threshold Voltage 2.3V
Maximum Drain Source Resistance 9.4@10VmOhm
Typical Input Capacitance @ Vds 1700@10VpF
Maximum Continuous Drain Current 23A

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