TPCF8101(TE85L,F,M)
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Краткое описание:
P-CH MOSFET, 12V, 6A, 8-Pin VS, Si, SM
Дополнительная информация
P-channel enhancement mode power MOSFET featuring a 12V maximum drain-source voltage and 6A maximum continuous drain current. This surface-mount transistor is housed in an 8-pin VS package with dimensions of 2.9mm (L) x 1.5mm (W) x 0.8mm (H) and a 0.65mm pin pitch. It offers a low 28mOhm maximum drain-source resistance at 4.5V gate-source voltage and a typical gate charge of 18nC at 5V. Operating across a -55°C to 150°C temperature range, this single hex drain configuration silicon MOSFET has a maximum power dissipation of 2500mW.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 8 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | VS |
| AEC Qualified | No |
| Configuration | Single Hex Drain |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 0.65 |
| Package Width (mm) | 1.5 |
| Package Family Name | VS |
| Package Height (mm) | 0.8 |
| Package Length (mm) | 2.9 |
| Seated Plane Height (mm) | 0.8 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 18@5VnC |
| Maximum Gate Source Voltage | ±8V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 12V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 1600@10VpF |
| Maximum Continuous Drain Current | 6A |
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