TPCF8302(TE85L,F,M)
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Краткое описание:
P-CH MOSFET, 20V, 3A, Dual Drain, Si, VS Pkg
Дополнительная информация
P-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 3A continuous drain current. This dual dual drain device is housed in an 8-pin VS package with a 0.65mm pin pitch, measuring 2.9mm x 1.5mm x 0.8mm. Key electrical characteristics include a maximum drain-source resistance of 59 mOhm at 4.5V, a typical gate charge of 11nC at 5V, and a typical input capacitance of 800pF at 10V. Operating across a temperature range of -55°C to 150°C, this surface-mount silicon component offers 1350mW maximum power dissipation.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 8 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | VS |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Package Width (mm) | 1.5 |
| Package Family Name | VS |
| Package Height (mm) | 0.8 |
| Package Length (mm) | 2.9 |
| Seated Plane Height (mm) | 0.8 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1350mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 11@5VnC |
| Maximum Gate Source Voltage | ±10V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 800@10VpF |
| Maximum Continuous Drain Current | 3A |
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