TPCF8304(TE85L,F,M)
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Краткое описание:
P-CH MOSFET, 30V, 3.2A, Dual Drain, 8-Pin VS, Si
Дополнительная информация
P-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 3.2A continuous drain current. This dual dual drain transistor is housed in an 8-pin VS surface mount package with dimensions of 2.9mm x 1.5mm x 0.8mm and a 0.65mm pin pitch. Key electrical characteristics include a maximum drain-source resistance of 72 mOhm at 10V, typical gate charge of 14 nC at 10V, and typical input capacitance of 600 pF at 10V. Maximum power dissipation is 1350 mW, with an operating temperature range of -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 8 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | VS |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 0.65 |
| Package Width (mm) | 1.5 |
| Package Family Name | VS |
| Package Height (mm) | 0.8 |
| Package Length (mm) | 2.9 |
| Seated Plane Height (mm) | 0.8 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1350mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 14nC |
| Typical Gate Charge @ Vgs | 14@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 72@10VmOhm |
| Typical Input Capacitance @ Vds | 600@10VpF |
| Maximum Continuous Drain Current | 3.2A |
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