TPCF8306
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Краткое описание:
P-CH MOSFET, 30V, 3.2A, Dual Drain, Si, VS Pkg
Дополнительная информация
8-pin P-channel enhancement mode power MOSFET, surface mountable in a compact 2.9mm x 1.5mm x 0.8mm VS package. Features dual drain configuration, 30V maximum drain-source voltage, and 3.2A continuous drain current. Utilizes U-MOS VI process technology for efficient operation with a maximum drain-source on-resistance of 72mΩ at 10V. Operates across a wide temperature range from -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 8 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | VS |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 0.65 |
| Package Width (mm) | 1.5 |
| Process Technology | U-MOS VI |
| Package Family Name | VS |
| Package Height (mm) | 0.8 |
| Package Length (mm) | 2.9 |
| Seated Plane Height (mm) | 0.8 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1350mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 10nC |
| Typical Gate Charge @ Vgs | 10@10VnC |
| Maximum Gate Source Voltage | 25V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 72@10VmOhm |
| Typical Input Capacitance @ Vds | 390@10VpF |
| Maximum Continuous Drain Current | 3.2A |
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