TPCM8003-H
Снят с производства
Краткое описание:
N-CH MOSFET 30V 21A Si TSSOP 8-Pin SMT
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 21A continuous drain current. This single element silicon MOSFET is housed in an 8-pin TSSOP lead-frame SMT package with gull-wing leads, measuring 3.5mm x 3.65mm x 0.75mm with a 0.8mm pin pitch. Key electrical characteristics include a maximum drain-source on-resistance of 12.9 mOhm at 10V, typical gate charge of 21nC at 10V, and typical input capacitance of 1433pF at 10V. Maximum power dissipation is 30000mW, with an operating temperature range of -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TSSOP |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| Pin Pitch (mm) | 0.8 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.65 |
| Package Description | Thin Shrink Small Outline Package |
| Package Family Name | SOP |
| Package Height (mm) | 0.75 |
| Package Length (mm) | 3.5 |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 30000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 21nC |
| Typical Gate Charge @ Vgs | 11@5V|21@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 12.9@10VmOhm |
| Typical Input Capacitance @ Vds | 1433@10VpF |
| Maximum Continuous Drain Current | 21A |
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