TPCS8211(T2LMDK)
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Краткое описание:
N-CH Power MOSFET, 20V, 6A, 8-Pin TSSOP, Dual
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 6A continuous drain current. This dual dual-source transistor is housed in an 8-pin TSSOP package with gull-wing leads for surface mounting. Key electrical characteristics include a maximum drain-source on-resistance of 24mOhm at 4V Vgs, typical gate charge of 20nC at 5V Vgs, and typical input capacitance of 1590pF at 10V Vds. Operating temperature range spans from -55°C to 150°C with a maximum power dissipation of 1100mW.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TSSOP |
| AEC Qualified | No |
| Configuration | Dual Dual Source |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 4.4 |
| Package Description | Thin Shrink Small Outline Package |
| Package Family Name | SOP |
| Package Height (mm) | 0.85 |
| Package Length (mm) | 3 |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1100mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 20@5VnC |
| Maximum Gate Source Voltage | ±12V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | 24@4VmOhm |
| Typical Input Capacitance @ Vds | 1590@10VpF |
| Maximum Continuous Drain Current | 6A |
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