TPH1400ANH,L1Q
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Краткое описание:
N-CHANNEL MOSFET, 100V, 24A, 11.3mR, SOP, Surface Mount
Дополнительная информация
The TPH1400ANH,L1Q is a surface mount N-CHANNEL MOSFET with a maximum drain to source breakdown voltage of 100V and a continuous drain current of 24A. It has a drain to source resistance of 11.3 milliohms and a maximum power dissipation of 48W. The device is packaged in a SOP package and has an input capacitance of 1.9 nanofarads. The TPH1400ANH,L1Q operates over a temperature range and meets the requirements of the manufacturer's specifications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Fall Time | 6.5ns |
| Packaging | Tape and Reel |
| Rds On Max | 13.6mR |
| Package/Case | SOP |
| Package Quantity | 5000 |
| Input Capacitance | 1.9nF |
| Power Dissipation | 48W |
| Turn-Off Delay Time | 22ns |
| Max Power Dissipation | 48W |
| Drain to Source Resistance | 11.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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