TPH4R008NH,L1Q

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TPH4R008NH,L1Q - Toshiba
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Краткое описание: N-CHANNEL MOSFET, 80V, 60A, 4mR Rds On, SOP Package
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The TPH4R008NH,L1Q is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 78W and a drain to source voltage of 80V. The device features a drain to source resistance of 3.3mR and an input capacitance of 5.3nF. It can handle a continuous drain current of 60A and has a turn-off delay time of 52ns.
RoHS Compliant
Mount Surface Mount
Polarity N-CHANNEL
Fall Time 12ns
Packaging Tape and Reel
Rds On Max 4mR
Package/Case SOP
Package Quantity 1
Input Capacitance 5.3nF
Turn-Off Delay Time 52ns
Max Power Dissipation 78W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.3mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Drain to Source Voltage (Vdss) 80V

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