TPH4R50ANH,L1Q

Производится
TPH4R50ANH,L1Q - Toshiba
Увеличить
Краткое описание: N-CHANNEL MOSFET, 100V, 60A, 4.5mR Rds On, SOP Package
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The TPH4R50ANH,L1Q is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 78W and a continuous drain current of 60A. The device has a drain to source resistance of 3.7mR and a gate to source voltage of 20V. It is packaged in a SOP package and is available on tape and reel.
RoHS Compliant
Mount Surface Mount
Polarity N-CHANNEL
Fall Time 13ns
Packaging Tape and Reel
Rds On Max 4.5mR
Package/Case SOP
Package Quantity 1
Input Capacitance 5.2nF
Turn-Off Delay Time 52ns
Max Power Dissipation 78W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.7mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Drain to Source Voltage (Vdss) 100V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.