TPH4R803PL
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Краткое описание:
30 V N-channel power MOSFET, 4.8 mΩ, SOP Advance
Дополнительная информация
This N-channel single power MOSFET is rated for 30 V drain-source voltage and is housed in Toshiba's 8-pin SOP Advance surface-mount package. It provides drain-source on-resistance up to 4.8 mΩ at 10 V gate drive or 6.2 mΩ at 4.5 V, with typical total gate charge of 22 nC and output charge of 14 nC. The device is intended for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers. Typical reverse recovery time is 26 ns, and the package measures 5.0 × 6.0 × 0.95 mm. Commercial production started in May 2017, and the product is RoHS compatible.
| Pins | 8 |
| RoHS | Yes |
| Weight | 0.069 typg |
| Channel Type | N-channel |
| Drain Current | 90A |
| Output Charge | 14 typnC |
| Input Capacitance | 1520 typpF |
| Power Dissipation | 69W |
| Total Gate Charge | 22 typ @ VGS=10VnC |
| Package Dimensions | 5.0 × 6.0 × 0.95mm |
| Gate-Source Voltage | ±20V |
| Drain-Source Voltage | 30V |
| Reverse Recovery Time | 26 typns |
| Gate Threshold Voltage | 1.1 to 2.1V |
| Reverse Recovery Charge | 14 typnC |
| Drain-Source On-Resistance | 6.2 max @ VGS=4.5VmΩ |
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