TPH7R006PL
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Краткое описание:
60 V N-Channel Power MOSFET, 7 mΩ, SOP Advance
Дополнительная информация
This N-channel power MOSFET uses Toshiba's U-MOSⅨ-H generation process and is housed in an 8-pin SOP Advance surface-mount package. It is rated for 60 V drain-source voltage, 79 A drain current, and 81 W power dissipation. Maximum drain-source on-resistance is 7 mΩ at 10 V gate drive and 13.5 mΩ at 4.5 V, with 22 nC typical total gate charge and 1440 pF typical input capacitance. The device targets high-efficiency DC-DC converters, switching voltage regulators, and motor drivers.
| Pins | 8 |
| Mounting | Surface Mount |
| Polarity | N-ch |
| Generation | U-MOSⅨ-H |
| Package Size | 5.0×6.0×0.95mm |
| Drain Current | 79A |
| Output Charge Typ | 20nC |
| Power Dissipation | 81W |
| Gate-Source Voltage | ±20V |
| Internal Connection | Single |
| Drain-Source Voltage | 60V |
| Input Capacitance Typ | 1440pF |
| Total Gate Charge Typ | 22nC |
| Reverse Recovery Time Typ | 32ns |
| Gate Threshold Voltage Max | 2.5V |
| Gate Threshold Voltage Min | 1.5V |
| Reverse Recovery Charge Typ | 28nC |
| Drain-Source On-Resistance Max @ VGS=10V | 7mΩ |
| Drain-Source On-Resistance Max @ VGS=4.5V | 13.5mΩ |
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