TPH8R80ANH,L1Q
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Краткое описание:
N-CHANNEL MOSFET 100V 32A 7.4mR 61W SOP Surface Mount
Дополнительная информация
The TPH8R80ANH,L1Q is a surface mount N-channel MOSFET with a maximum drain current rating of 32A and a drain to source breakdown voltage of 100V. It has a drain to source resistance of 7.4 milliohms and a maximum power dissipation of 61 watts. The device is packaged in a SOP package and is suitable for surface mount applications. The TPH8R80ANH,L1Q operates over a temperature range of -40 to 150 degrees Celsius.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Packaging | Tape and Reel |
| Rds On Max | 8.8mR |
| Package/Case | SOP |
| Package Quantity | 5000 |
| Input Capacitance | 2.8nF |
| Power Dissipation | 61W |
| Turn-Off Delay Time | 33ns |
| Max Power Dissipation | 61W |
| Drain to Source Resistance | 7.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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