TPN2R503NC
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Краткое описание:
N-CH MOSFET 30V 85A 2.5mΩ TSON EP SMT
Дополнительная информация
N-channel Power MOSFET featuring U-MOS VIII process technology. 30V drain-source voltage and 85A continuous drain current capability. Surface mountable in an 8-pin TSON EP Advance package with flat leads and 0.65mm pin pitch. Offers low 2.5mOhm drain-source resistance at 10V.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Flat |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TSON EP Advance |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.1 |
| Process Technology | U-MOS VIII |
| Package Height (mm) | 0.85 |
| Package Length (mm) | 3.1 |
| Seated Plane Height (mm) | 0.85 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 35000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 40nC |
| Typical Gate Charge @ Vgs | 40@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 2.5@10VmOhm |
| Typical Input Capacitance @ Vds | 2230@15VpF |
| Maximum Continuous Drain Current | 85A |
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