TPN2R503NC,L1Q

Производится
TPN2R503NC,L1Q - Toshiba
Краткое описание: N-CHANNEL MOSFET 30V 40A 35W Surface Mount
Производитель Toshiba
Категория Транзисторы
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The TPN2R503NC,L1Q is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 35W and a continuous drain current of 40A. The device features a drain to source breakdown voltage of 30V and a drain to source resistance of 2.1mR. It is packaged in tape and reel quantities of 5000.
RoHS Compliant
Mount Surface Mount
Polarity N-CHANNEL
Fall Time 24ns
Packaging Tape and Reel
Rds On Max 2.5mR
Resistance 0.0025R
Capacitance 2.23E-09F
Package Quantity 5000
Input Capacitance 2.23nF
Power Dissipation 35W
Turn-Off Delay Time 68ns
Max Power Dissipation 35W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.1mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 40A
Drain to Source Voltage (Vdss) 30V
Drain to Source Breakdown Voltage 30V

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