TPN4R203NC,L1Q

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TPN4R203NC,L1Q - Toshiba
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Краткое описание: N-CHANNEL MOSFET 30V 23A 4.2mR 700mW Surface Mount
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The TPN4R203NC,L1Q is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 700mW and a continuous drain current of 23A. The device has a drain to source resistance of 35mR and a gate to source voltage of 20V. It also features an input capacitance of 1.37nF and a fall time of 14ns.
RoHS Compliant
Mount Surface Mount
Polarity N-CHANNEL
Fall Time 14ns
Packaging Tape and Reel
Rds On Max 4.2mR
Resistance 0.0025R
Capacitance 1.37E-09F
Package Quantity 1
Input Capacitance 1.37nF
Turn-Off Delay Time 52ns
Max Power Dissipation 700mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 35mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 23A
Drain to Source Voltage (Vdss) 30V

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