TPN5R203PL
Краткое описание:
30 V N-Channel Power MOSFET, 3.9 mΩ, 8-TSON
Дополнительная информация
This device is a silicon N-channel power MOSFET for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers. It supports a 30 V drain-source rating and is offered in an 8-pin TSON Advance package for surface mounting. The datasheet lists a typical drain-source on-resistance of 3.9 mΩ at a 10 V gate drive, a typical switching gate charge of 5.2 nC, and a typical output charge of 14 nC. It is specified as an enhancement-mode MOSFET with a threshold voltage range of 1.1 V to 2.1 V and a maximum drain leakage current of 10 µA at 30 V.
| RoHS | Compliant |
| Package | 8-TSON Advance EP |
| Channel Type | N-Channel |
| Mounting Type | Surface Mount |
| Gate Charge (QSW) | 5.2 typnC |
| Power Dissipation | 61W |
| Drain-Source Voltage | 30V |
| Output Charge (Qoss) | 14 typnC |
| Gate Threshold Voltage | 1.1 to 2.1V |
| Continuous Drain Current | 38A |
| Drain-Source On-Resistance | 3.9 typmΩ |
| Drain Leakage Current (IDSS) | 10 maxµA |
| Gate Drive Test Voltage for RDS(ON) | 10V |