TPS1100D
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Краткое описание:
P-Channel JFET, -15V Vdss, 1.6A ID, 180mR Rds On, SOIC
Дополнительная информация
Single P-channel enhancement-mode MOSFET for surface mount applications. Features a continuous drain current of 1.6A and a drain-to-source breakdown voltage of -15V. Offers a low on-state resistance of 180mR and fast switching times with a fall time of 10ns. Packaged in an 8-SOIC with dimensions of 4.9mm length, 3.91mm width, and 1.75mm height. Operates within a temperature range of -40°C to 125°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.91mm |
| Height | 1.75mm |
| Length | 4.9mm |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Thickness | 1.58mm |
| Rds On Max | 180mR |
| Nominal Vgs | -1.25V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | -1.6A |
| Output Voltage | -15V |
| RoHS Compliant | Yes |
| DC Rated Voltage | -15V |
| Package Quantity | 75 |
| Power Dissipation | 791mW |
| Max Output Current | 1.6A |
| Turn-On Delay Time | 4.5ns |
| On-State Resistance | 180mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 791mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | -15V |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | 15V |
| Drain to Source Breakdown Voltage | -15V |
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