TPS1100DG4
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Краткое описание:
P-CHANNEL MOSFET, 15V, 1.6A, 791mW, SOIC, -40°C to 125°C
Дополнительная информация
The TPS1100DG4 is a P-channel MOSFET with a drain to source breakdown voltage of 15V and a continuous drain current of 1.6A. It has a maximum power dissipation of 791mW and is packaged in a surface mount SOIC package. The device operates over a temperature range of -40°C to 125°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 180mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Power Dissipation | 791mW |
| Turn-On Delay Time | 4.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Max Power Dissipation | 791mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 2V |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | 15V |
| Drain to Source Breakdown Voltage | 15V |
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