TPS1100DRG4
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Краткое описание:
P-CHANNEL JFET, 15V, 1.6A, SOIC-8
Дополнительная информация
The TPS1100DRG4 is a P-channel junction field-effect transistor with a maximum operating temperature of -40°C to 125°C. It features a maximum power dissipation of 791mW and a maximum drain to source breakdown voltage of 15V. The device is packaged in a surface mount SOIC-8 package and is RoHS compliant. The TPS1100DRG4 has a continuous drain current of 1.6A and a drain to source resistance of 180mR.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 180mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 791mW |
| Turn-On Delay Time | 4.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Max Power Dissipation | 791mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 2V |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | 15V |
| Drain to Source Breakdown Voltage | 15V |
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