TPS1100PW
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Краткое описание:
P-CHANNEL JFET, 15V, 1.27A, 180mR, TSSOP-8
Дополнительная информация
The TPS1100PW is a P-CHANNEL junction field-effect transistor with a drain to source breakdown voltage of 15V and a continuous drain current of 1.27A. It features a drain to source resistance of 400mR and a maximum power dissipation of 504mW. The device is packaged in a lead-free TSSOP-8 package and is RoHS compliant. It operates over a temperature range of -40°C to 125°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 180mR |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 150 |
| Power Dissipation | 504mW |
| Turn-On Delay Time | 4.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Max Power Dissipation | 504mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 400mR |
| Gate to Source Voltage (Vgs) | 2V |
| Continuous Drain Current (ID) | 1.27A |
| Drain to Source Voltage (Vdss) | 15V |
| Drain to Source Breakdown Voltage | 15V |
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