TPS1101DR
Производится
Увеличить
Краткое описание:
Single P-channel Enhancement-Mode MOSFET 8-SOIC
Дополнительная информация
Single P-channel Enhancement-Mode MOSFET 8-SOIC
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 5.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 90mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 791mW |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Max Power Dissipation | 791mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 90mR |
| Gate to Source Voltage (Vgs) | 2V |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Voltage (Vdss) | 15V |
| Drain to Source Breakdown Voltage | 15V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
