TPS1101DRG4
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Краткое описание:
P-CHANNEL MOSFET, 2.3A, 15V, 90mR, SOIC
Дополнительная информация
The TPS1101DRG4 is a P-channel MOSFET with a continuous drain current of 2.3A and a drain to source breakdown voltage of 15V. It features a drain to source resistance of 90mR and a maximum power dissipation of 791mW. This device is suitable for surface mount applications and operates within a temperature range of -40°C to 125°C. The TPS1101DRG4 is RoHS compliant and lead free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 5.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 90mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 791mW |
| Turn-On Delay Time | 6.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Max Power Dissipation | 791mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 90mR |
| Gate to Source Voltage (Vgs) | 2V |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Voltage (Vdss) | 15V |
| Drain to Source Breakdown Voltage | 15V |
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