TPS1120D
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Краткое описание:
Dual P-Channel JFET, 15V Vdss, 1.17A ID, SOIC
Дополнительная информация
Dual P-channel enhancement-mode MOSFET in an 8-SOIC package. Features a 15V Drain to Source Breakdown Voltage and 1.17A Continuous Drain Current. Offers a low Rds On Max of 180mR and a Gate to Source Voltage of 2V. Operates across a -40°C to 125°C temperature range with a Max Power Dissipation of 840mW. Surface mountable with fast switching times, including a 4.5ns Turn-On Delay Time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Thickness | 1.58mm |
| Rds On Max | 180mR |
| Package/Case | SOIC |
| Current Rating | -1.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -15V |
| Package Quantity | 75 |
| Power Dissipation | 840mW |
| Threshold Voltage | -1.25V |
| Number of Elements | 2 |
| Turn-On Delay Time | 4.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 840mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 400mR |
| Gate to Source Voltage (Vgs) | 2V |
| Continuous Drain Current (ID) | 1.17A |
| Drain to Source Voltage (Vdss) | 15V |
| Drain to Source Breakdown Voltage | 15V |
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