TPS604(A)

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TPS604(A) - Toshiba
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Краткое описание: NPN Phototransistor, 800nm, 2-Pin TO-18, Through Hole
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN silicon phototransistor chip, 2-pin TO-18 package, designed for through-hole mounting. Features a peak wavelength of 800nm, a half-intensity angle of 20°, and a domed lens for top-view viewing. Offers a maximum light current of 200µA, maximum collector current of 50mA, and maximum emitter-collector voltage of 40V. Operates within a temperature range of -40°C to 125°C, with a maximum power dissipation of 150mW.
PCB 2
ECCN EAR99
PPAP No
Type Chip
HTS Code 8541407080
Mounting Through Hole
Polarity NPN
Cage Code S0562
Pin Count 2
Automotive No
Lead Shape Through Hole
Schedule B 8541407080
Package/Case TO-18
AEC Qualified No
Lens Shape Type Domed
Peak Wavelength 800nm
Package Material Metal
Maximum Fall Time 2000(Typ)ns
Maximum Rise Time 2000(Typ)ns
Basic Package Type Through Hole
Package Description Transistor Outline Package
Package Family Name TO-206-AA
Package Height (mm) 6.2
Radiation Hardening No
Viewing Orientation Top View
Maximum Dark Current 200nA
Phototransistor Type Phototransistor
Maximum Light Current 200(Typ)uA
Package Diameter (mm) 5.8
Fabrication Technology NPN Transistor
Max Operating Temperature 125°C
Maximum Collector Current 50mA
Maximum Power Dissipation 150mW
Min Operating Temperature -40°C
Number of Channels per Chip 1
Half Intensity Angle Degrees 20°
Maximum Collector-Emitter Voltage 40V
Maximum Emitter-Collector Voltage 5V
Maximum Collector-Emitter Saturation Voltage 0.4V

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