The TSM150P04LCS is a P-Channel enhancement mode power field effect transistor produced using Taiwan Semiconductor's advanced trench technology. It is designed to provide high switching speed and low on-resistance, making it suitable for high-efficiency power management, load switching, and DC-DC converter applications. The device is housed in a standard 8-pin SOP package and is optimized for low gate charge and excellent thermal performance.
| RoHS |
RoHS3 Compliant |
| REACH |
REACH Unaffected |
| Halogen-free |
Yes |
| Input Capacitance (Ciss) |
2783pF |
| Drain-Source Voltage (Vdss) |
-40V |
| Operating Junction Temperature |
-55 to +150°C |
| Moisture Sensitivity Level (MSL) |
1 |
| Power Dissipation (Pd) @ Tc=25°C |
12.5W |
| Total Gate Charge (Qg) @ Vgs=-10V |
48nC |
| Gate-Source Threshold Voltage (Vgs th) |
-1.0 to -2.5V |
| Continuous Drain Current (Id) @ Tc=25°C |
-22A |
| Drain-Source On-State Resistance (Rds On) @ Vgs=-10V |
15mΩ |
| Drain-Source On-State Resistance (Rds On) @ Vgs=-4.5V |
21mΩ |