TSM1NB60SCT A3G
Снят с производства
Увеличить
Краткое описание:
600V 0.5A N-CH MOSFET TO-92 Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 600V drain-source voltage and 0.5A continuous drain current. This single element transistor is housed in a 3-pin TO-92 plastic package with formed leads for through-hole mounting. Key specifications include a ±30V gate-source voltage, 4.5V gate threshold voltage, and 10000 mOhm drain-source resistance at 10V. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 2500mW.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SDM41 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Formed |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-92 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 3.7(Max) |
| Package Description | Plastic Header Style Package |
| Package Family Name | TO-92 |
| Package Height (mm) | 4.7(Max) |
| Package Length (mm) | 4.7(Max) |
| Seated Plane Height (mm) | 4.7(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 6.1nC |
| Typical Gate Charge @ Vgs | 6.1@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 10000@10VmOhm |
| Typical Input Capacitance @ Vds | 138@25VpF |
| Maximum Continuous Drain Current | 0.5A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
