TSM20N50CN C0
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Краткое описание:
N-CH MOSFET 500V 20A TO-3PN Through Hole Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET, 500V drain-source voltage, 20A continuous drain current. Features a TO-3PN package with 3 pins and a tab, suitable for through-hole mounting. Operates from -55°C to 150°C, with a maximum gate-source voltage of ±30V and a low 300mΩ drain-source resistance at 10V.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| Mounting | Through Hole |
| Cage Code | SDM41 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-3PN |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.8 |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-3PN |
| Package Height (mm) | 19.9 |
| Package Length (mm) | 15.6 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 54nC |
| Typical Gate Charge @ Vgs | 54@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 300@10VmOhm |
| Typical Input Capacitance @ Vds | 3094@25VpF |
| Maximum Continuous Drain Current | 20A |
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