TSM2NB60CH C5G
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Краткое описание:
600V 2A N-CH Power MOSFET TO-251
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 2A continuous drain current. This single transistor, housed in a TO-251 package with 3 pins and a tab, offers through-hole mounting. Key specifications include a maximum gate-source voltage of ±30V, a maximum drain-source on-resistance of 4400 mOhm at 10V, and a maximum power dissipation of 44W. Operating temperature range is -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SDM41 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-251 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 2.5(Max) |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-251 |
| Package Height (mm) | 5.7(Max) |
| Package Length (mm) | 6.7(Max) |
| Seated Plane Height (mm) | 9.2(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 44000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 9.4nC |
| Typical Gate Charge @ Vgs | 9.4@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 4400@10VmOhm |
| Typical Input Capacitance @ Vds | 249@25VpF |
| Maximum Continuous Drain Current | 2A |
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