TSM4NB60CP ROG
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Краткое описание:
600V 4A N-CH Power MOSFET DPAK SMT
Дополнительная информация
N-channel enhancement mode power MOSFET in a 3-pin DPAK (TO-252) package. Features a maximum drain-source voltage of 600V and a continuous drain current of 4A. Surface mountable with gull-wing leads, this single element transistor offers a maximum power dissipation of 50W and a drain-source on-resistance of 2500mΩ at 10V. Operating temperature range is -55°C to 150°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | SDM41 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 6.1 |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.28 |
| Package Length (mm) | 6.5 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 14.5nC |
| Typical Gate Charge @ Vgs | 14.5@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 2500@10VmOhm |
| Typical Input Capacitance @ Vds | 500@25VpF |
| Maximum Continuous Drain Current | 4A |
