TSM6963SDCA RV
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Краткое описание:
P-CH MOSFET 20V 4.5A 8-Pin TSSOP SMT
Дополнительная информация
P-channel enhancement mode Power MOSFET featuring a 20V drain-source voltage and 4.5A continuous drain current. This dual-source transistor utilizes TMOS process technology and is housed in an 8-pin TSSOP (Thin Shrink Small Outline Package) with gull-wing leads for surface mounting. Key specifications include a maximum gate-source voltage of ±12V, a low drain-source on-resistance of 30mΩ at 4.5V, and a maximum power dissipation of 1140mW. Operating temperature range is -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | MO-153AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | SDM41 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | TSSOP |
| AEC Qualified | No |
| Configuration | Dual Dual Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 4.5(Max) |
| Process Technology | TMOS |
| Package Description | Thin Shrink Small Outline Package |
| Package Family Name | SOP |
| Package Height (mm) | 1.05(Max) |
| Package Length (mm) | 3.1(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.2(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1140mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Gate Source Voltage | ±12V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 1500@10VpF |
| Maximum Continuous Drain Current | 4.5A |
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