TSM6N50CH C5
Снят с производства
Краткое описание:
N-CH MOSFET 500V 5.6A TO-251 Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 5.6A continuous drain current. This single element DMOS transistor is housed in a TO-251 package with 3 through-hole pins and a tab. Key specifications include a maximum gate-source voltage of ±30V, a maximum drain-source on-resistance of 1400mΩ at 10V, and a maximum power dissipation of 90W. Operating temperature range is -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SDM41 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-251 |
| AEC Qualified | No |
| Configuration | Single |
| Package Width (mm) | 2.5(Max) |
| Process Technology | DMOS |
| Package Description | Transistor Outline Package |
| Package Height (mm) | 5.7(Max) |
| Package Length (mm) | 6.7(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 90000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 25nC |
| Typical Gate Charge @ Vgs | 25@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 1400@10VmOhm |
| Typical Input Capacitance @ Vds | 680@25VpF |
| Maximum Continuous Drain Current | 5.6A |
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