TSM7N65CI C0
Снят с производства
Краткое описание:
N-CH MOSFET 650V 6.4A TO-220 Power Transistor
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source voltage and 6.4A continuous drain current. This single-element transistor utilizes an enhancement mode channel and is housed in an ITO-220 package with 3 pins for through-hole mounting. Key specifications include a maximum drain-source resistance of 1200 mOhm at 10V, typical gate charge of 32 nC at 10V, and typical input capacitance of 905 pF at 25V. Maximum power dissipation is 30000 mW, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SDM41 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | ITO-220 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 4.5(Max) |
| Package Family Name | TO-220 |
| Package Height (mm) | 15 |
| Package Length (mm) | 10.07(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 30000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 32nC |
| Typical Gate Charge @ Vgs | 32@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 650V |
| Maximum Drain Source Resistance | 1200@10VmOhm |
| Typical Input Capacitance @ Vds | 905@25VpF |
| Maximum Continuous Drain Current | 6.4A |
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