TSM7N65CZ C0
Снят с производства
Краткое описание:
N-CH MOSFET 650V 6.4A TO-220 Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a maximum drain-source voltage of 650V and a continuous drain current of 6.4A. This single-element transistor is housed in a TO-220 package with 3 pins, designed for through-hole mounting. Key specifications include a maximum drain-source on-resistance of 1200 mOhm at 10V, typical gate charge of 32 nC at 10V, and typical input capacitance of 905 pF at 25V. Maximum power dissipation is 125W, with an operating temperature range from -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SDM41 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.83(Max) |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Length (mm) | 10.5(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 125000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 32nC |
| Typical Gate Charge @ Vgs | 32@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 650V |
| Maximum Drain Source Resistance | 1200@10VmOhm |
| Typical Input Capacitance @ Vds | 905@25VpF |
| Maximum Continuous Drain Current | 6.4A |
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