TSM7N90CZ C0
Краткое описание:
N-CH MOSFET 900V 7A TO-220 Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET in a TO-220 package, featuring a maximum drain-source voltage of 900V and a continuous drain current of 7A. This single-element transistor offers a gate-source voltage range of ±30V and a maximum gate threshold voltage of 4V. With a low on-resistance of 1900mΩ at 10V and a maximum power dissipation of 250W, it is designed for through-hole mounting. Operating temperature range spans from -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SDM41 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Plastic |
| Package Width (mm) | 4.19 |
| Package Description | Transistor Outline Package |
| Package Height (mm) | 9 |
| Package Length (mm) | 10 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 250000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 49nC |
| Typical Gate Charge @ Vgs | 49@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 1900@10VmOhm |
| Typical Input Capacitance @ Vds | 1969@25VpF |
| Maximum Continuous Drain Current | 7A |
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