The TSM80N950CP ROG is an N-Channel enhancement mode power MOSFET produced using Taiwan Semiconductor's proprietary planar stripe and DMOS technology. This advanced technology is tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
| RoHS |
Compliant |
| Pb-free |
Yes |
| Halogen-free |
Compliant |
| Power Dissipation |
114W |
| Total Gate Charge |
26nC |
| Gate-Source Voltage |
±30V |
| Drain-Source Voltage |
800V |
| Continuous Drain Current |
8A |
| Operating Junction Temperature |
-55 to +150°C |
| Drain-Source On-State Resistance (Max) |
0.95Ω |