The TSM850N06CX RFG is an N-Channel power MOSFET produced using advanced trench technology. It is designed for high efficiency and reliability in low-voltage applications, such as DC-DC converters, load switches, and power management. It features low on-resistance and is optimized for low gate charge to minimize switching losses.
| RoHS |
Compliant |
| Halogen-free |
Yes |
| Total Gate Charge (Qg) |
1.3nC |
| Gate-Source Voltage (Vgs) |
±20V |
| Drain-Source Voltage (Vdss) |
60V |
| Continuous Drain Current (Id) |
1.4A |
| Operating Junction Temperature |
-55 to +150°C |
| Drain-Source On-Resistance (Rds(on)) Max |
850mOhms |