TSM9N90CN C0
Снят с производства
Краткое описание:
N-CH MOSFET 900V 9.5A TO-3PN Through Hole
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 900V maximum drain-source voltage and 9.5A continuous drain current. This single-element transistor is housed in a 3-pin TO-3PN through-hole package with a plastic body, measuring 15.6mm in length, 4.8mm in width, and 19.9mm in height, with a 5.45mm pin pitch. It offers a maximum power dissipation of 312,000mW and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a ±30V maximum gate-source voltage, 4V maximum gate threshold voltage, and 1400mOhm maximum drain-source resistance at 10V.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SDM41 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-3PN |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.8 |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-3PN |
| Package Height (mm) | 19.9 |
| Package Length (mm) | 15.6 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 312000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 65nC |
| Typical Gate Charge @ Vgs | 65@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 1400@10VmOhm |
| Typical Input Capacitance @ Vds | 2324@25VpF |
| Maximum Continuous Drain Current | 9.5A |
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