TT8U1
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Краткое описание:
P-CH MOSFET 20V 2.4A 8-Pin SMT TSST
Дополнительная информация
P-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 2.4A continuous drain current. This single dual drain transistor is housed in an 8-pin TSST lead-frame SMT package with a 0.65mm pin pitch, measuring 3.10mm(Max) x 1.70mm(Max) x 0.80mm(Max). Key specifications include a maximum drain-source on-resistance of 10.5 mOhm at 4.5V, typical gate charge of 6.7 nC at 4.5V, and typical input capacitance of 850pF at 10V. Maximum power dissipation is 1000mW, with an operating temperature range of -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | S5518 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Flat |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | TSST |
| AEC Qualified | No |
| Configuration | Single Dual Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 1.70(Max) |
| Package Family Name | TSST |
| Package Height (mm) | 0.80(Max) |
| Package Length (mm) | 3.10(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.85(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Gate Source Voltage | ±10V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 850@10VpF |
| Maximum Continuous Drain Current | 2.4A |
