TTC0002(Q)

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TTC0002(Q) - Toshiba
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Краткое описание: NPN Transistor, 160V 18A 30MHz Through Hole
Производитель Toshiba
Категория Разнообразный
Статус производства Производится (ACTIVE)

Дополнительная информация

The TTC0002(Q) is a single NPN transistor with a collector-emitter breakdown voltage of 160V and a maximum collector current of 18A. It operates at frequencies up to 30MHz and has a gain bandwidth product of 30MHz. The transistor is packaged in a through-hole package and is compliant with RoHS regulations. It has a maximum power dissipation of 180W and can operate over a temperature range of -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Polarity NPN
Frequency 30MHz
Lead Free Lead Free
Packaging Bulk
RoHS Compliant Yes
Package Quantity 100
Power Dissipation 180W
Number of Elements 1
Radiation Hardening No
Transition Frequency 30MHz
Max Collector Current 18A
Max Power Dissipation 180W
Gain Bandwidth Product 30MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 160V
Collector-emitter Voltage-Max 2V
Collector Emitter Voltage (VCEO) 160V
Collector Emitter Breakdown Voltage 160V
Collector Emitter Saturation Voltage 2V

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