TTC5200(Q)

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TTC5200(Q) - Toshiba
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Краткое описание: NPN BJT Transistor 230V 15A 150W 30MHz TO-3PL
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor (BJT) for general-purpose applications. Features a maximum collector current of 15A and a collector-emitter voltage (VCEO) of 230V. Offers a transition frequency of 30MHz and a minimum hFE of 80. Packaged in a 3-pin TO-3PL through-hole mount with a maximum power dissipation of 150W. Operates across a wide temperature range from -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 5.2mm
Height 26mm
Length 20.5mm
hFE Min 80
Polarity NPN
Frequency 30MHz
Lead Free Lead Free
Packaging Bulk
Max Frequency 30MHz
RoHS Compliant Yes
Package Quantity 100
Power Dissipation 150W
Number of Elements 1
Radiation Hardening No
Transition Frequency 30MHz
Max Collector Current 15A
Max Power Dissipation 150W
Gain Bandwidth Product 30MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 230V
Collector-emitter Voltage-Max 3V
Collector Emitter Voltage (VCEO) 230V
Collector Emitter Breakdown Voltage 230V
Collector Emitter Saturation Voltage 3V

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