UCC27325DG4

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UCC27325DG4 - Texas Instruments
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Краткое описание: Dual MOSFET Gate Driver IC, 4A, 35ns, SOIC
Производитель Texas Instruments
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

Dual high-side MOSFET driver IC with 4A output current, 35ns propagation delay, and 40ns fall time. Features 2 channels, 2 drivers, and 2 outputs, operating from a 4.5V to 15V supply voltage. Surface mountable in an 8-pin SOIC package, this lead-free and RoHS compliant component offers a maximum power dissipation of 1.14W and a maximum operating temperature of 125°C.
RoHS Compliant
Mount Surface Mount
Weight 0.002561oz
Fall Time 40ns
Lead Free Lead Free
Packaging Rail/Tube
Package/Case SOIC
Output Current 4A
RoHS Compliant Yes
Supply Current 600uA
Package Quantity 75
Number of Drivers 2
Number of Outputs 2
Power Dissipation 1.14W
Propagation Delay 35ns
Max Output Current 4.5A
Max Supply Current 600uA
Max Supply Voltage 15V
Min Supply Voltage 4.5V
Number of Channels 2
Turn-On Delay Time 35ns
Radiation Hardening No
Max Power Dissipation 1.14W
Max Operating Temperature 125°C
Min Operating Temperature -40°C