UCC37325DG4

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UCC37325DG4 - Texas Instruments
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Краткое описание: Dual Gate Driver IC, 4A Output, 35ns Delay, SOIC
Производитель Texas Instruments
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

Dual High-Side Power FET Driver IC, featuring two independent channels for driving power MOSFETs. Delivers up to 4.5A maximum output current with a typical 4A output current. Operates with supply voltages from 4.5V to 15V, consuming a maximum of 600uA supply current. Exhibits a propagation delay of 35ns and a fall time of 40ns. Packaged in an 8-pin SOIC for surface mounting, this RoHS compliant component offers a maximum power dissipation of 1.14W and operates within a temperature range of 0°C to 70°C.
RoHS Compliant
Mount Surface Mount
Weight 0.002561oz
Fall Time 40ns
Lead Free Lead Free
Packaging Rail/Tube
Package/Case SOIC
Output Current 4A
RoHS Compliant Yes
Supply Current 600uA
Package Quantity 75
Number of Drivers 2
Number of Outputs 2
Power Dissipation 1.14W
Propagation Delay 35ns
Max Output Current 4.5A
Max Supply Current 600uA
Max Supply Voltage 15V
Min Supply Voltage 4.5V
Number of Channels 2
Turn-On Delay Time 35ns
Radiation Hardening No
Max Power Dissipation 1.14W
Max Operating Temperature 70°C
Min Operating Temperature 0°C

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