UF3C120040K3S
Производится
Краткое описание:
Silicon Carbide (SiC) Cascode JFET - 1200 V, 35 mohm, TO-247-3
Дополнительная информация
This EliteSiC Cascode JFET is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. It features ultralow gate charge and exceptional reverse recovery characteristics. Designed as a drop-in replacement for Si IGBTs, Si FETs, or SiC MOSFETs, it is optimized for high-efficiency switching of inductive loads.
| RoHS | Compliant |
| Halogen Free | Yes |
| Esd Protected | HBM Class 2 |
| Gate Charge (Qg) | 51nC |
| Output Capacitance (Coss) | 210pF |
| Drain-source Voltage (VDS) | 1200V |
| Max Operating Temperature (TJ) | 175°C |
| Typical On-resistance (RDS(on)) | 35mohm |
| Gate Threshold Voltage (VGS(th)) | 5V |
| Maximum Power Dissipation (Ptot) | 429W |
| Continuous Drain Current (ID) @ TC=25°C | 65A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.