UF7832
Краткое описание:
30 V 20 A N-Channel Power MOSFET in SOP-8
Дополнительная информация
This device is an N-channel power MOSFET rated for 30 V drain-source voltage and 20 A continuous drain current. It uses high cell density trench technology to achieve low on-resistance, with a maximum of 4.0 mΩ at 10 V gate drive and 5.5 mΩ at 4.5 V gate drive. The part is intended for high-frequency DC-DC converters with synchronous rectification applications. It is offered in an SOP-8 package and carries a preliminary lifecycle marking in the manufacturer datasheet. The junction temperature range extends to 150 °C, and pulsed drain current is rated to 80 A.
| Fall Time | 1060ns |
| Rise Time | 352ns |
| Transistor Type | N-Channel Power MOSFET |
| Input Capacitance | 4150pF |
| Power Dissipation | 3.5W |
| Total Gate Charge | 34nC |
| Output Capacitance | 760pF |
| Turn-On Delay Time | 88ns |
| Gate-Source Voltage | ±20V |
| Turn-Off Delay Time | 1620ns |
| Drain-Source Voltage | 30V |
| Junction Temperature | 150°C |
| Pulsed Drain Current | 80A |
| Gate Threshold Voltage | 1.0 to 2.5V |
| Continuous Drain Current | 20A |
| Storage Temperature Range | -55 to 150°C |
| Body-Diode Forward Voltage | 1.0V |
| Reverse Transfer Capacitance | 700pF |
| Drain-Source On-Resistance @ VGS=10V | 4.0 maxmΩ |
| Drain-Source On-Resistance @ VGS=4.5V | 5.5 maxmΩ |